Program: Microsystems Engineering

Dr. Hasan M. Nayfeh received his Ph.D. (2003) in Electrical Engineering in the area of strained silicon/SiGe devices from MIT (Cambridge, MA). After joining IBM Semiconductor Research & Development Center (Hopewell Junction, NY) in 2003, he worked on SOI device design that resulted in the successful deployment of 65nm and 45nm technology nodes.

From 2010-2011 his focus was on technology definition for the 22nm node in his role as lead device design senior engineer. He has 30 technical publications, 4 issued patents, and is a Senior Member of the IEEE.